Planarized interference mirror

Coherent light generators – Particular resonant cavity – Specified cavity component

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372 45, H01S 308, H01S 318

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active

053234162

ABSTRACT:
A semiconductor interference mirror principally comprising a large number of pairs (36) of semiconductor layers (38,40) having different dielectric constants and having optical thicknesses equal to one-quarter of the wavelength of light to be reflected. For example, the two semiconductors are InP and InGaAsP for reflecting 1.55-.mu.m light. However, every 10 to 15 periods in the mirror, the InP layer (44) is grown more slowly to a thickness that is an odd multiple of its usual quarter-wavelength thickness. Because indium is so mobile and binary composition is well defined, the binary InP layer replanarizes the growth, thus assuring a planar mirror. The faster growth rate for the majority of the mirror allows the mirror to be grown in a shorter time, thus reducing process variations.

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F. S. Choa et al., "High reflectivity 1.55 .mu.m InP/InGaAsP Bragg mirror grown by chemical beam epitaxy," Applied Physics Letters, Nov. 25, 1991, vol. 59, pp. 2820-2822.
T. Tadokoro et al., "Room Temperature Pulsed Operation of 1.5 .mu.m GaInAsP/InP Vertical-Cavity Surface-Emitting Laser," IEEE Photonics Technology Letters, May 1992, vol. 5, pp. 409-411.
K. Tai et al., "Room temperature photopumped 1.5 .mu.m quantum well surface emitting lasers with InGaAsP/InP distributed Bragg reflectors," Electronics Letters, Aug. 15, 1991, vol. 27, pp. 1540-1542.
S. J. B. Yoo et al., "Quasi-CW Room-Temperature Operation of 1.55 .mu.m Vertical Cavity Surface Emitting Lasers Grown by OMCVD," IEEE Lasers & Electro-Optics Society 1992 Annual Meeting: Post Deadline Papers, Paper PD6, Nov. 16, 1992.

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