Planarized ceramic substrates

Details Planarized ceramic substrates Planarized ceramic substrates

1985-06-24

1987-04-21

Smith, John D.

Coating processes

Radioactive base or coating

427 94, 427269, 4271264, 4271263, 427193, 427199, 427 50, 427 99, 427 39, 427 9, B05D 306

Patent

active

046595856

ABSTRACT:
A method of planarizing or smoothing the surface of a ceramic substrate by deposition of a silicon nitride layer. The silicon nitride in addition to planarizing the surface forms an alpha particle barrier. The substrates suitable for planarization with silicon nitride in accordance with the method of the present invention are sintered oxide particles which are bonded with a silicon bonding phase. The silicon content of the silicon bonding phase is greater than the silicon content of the aggregate of the oxide particles. The silicon nitride is preferably deposited by plasma enhanced chemical vapor deposition, and the silicon bonding phase is preferably a glass.

REFERENCES:
patent: 4036723 (1977-07-01), Schwartz
patent: 4202914 (1980-05-01), Havas
patent: 4407851 (1983-10-01), Kurosawa
patent: 4423547 (1984-01-01), Farrar
patent: 4448633 (1984-05-01), Shuskus
patent: 4587171 (1986-05-01), Hamano

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