Planarized ceramic substrates

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428331, 428404, 428446, 428698, 428701, B32B 1800, B32B 900, B32B 1900

Patent

active

047613327

ABSTRACT:
A method of planarizing or smoothing the surface of a ceramic substrate by deposition of a silicon nitride layer. The silicon nitride in addition to planarizing the surface forms an alpha particle barrier. The substrates suitable for planarization with silicon nitride in accordance with the method of the present invention are sintered oxide particles which are bonded with a silicon bonding phase. The silicon content of the silicon bonding phase is greater than the silicon content of the aggregate of the oxide particles. The silicon nitride is preferably deposited by plasma enhanced chemical vapor deposition, and the silicon bonding phase is preferably a glass.

REFERENCES:
patent: 4007103 (1977-02-01), Baker et al.
patent: 4020234 (1977-04-01), Gardner
patent: 4036723 (1977-07-01), Schwartz
patent: 4118539 (1978-10-01), Hirai et al.
patent: 4618541 (1986-10-01), Forouhi et al.
patent: 4652276 (1987-03-01), Burden

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