Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-05-08
2007-05-08
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000, C051S308000, C451S036000
Reexamination Certificate
active
10605610
ABSTRACT:
Disclosed herein are a system and method of polishing a layer of a substrate. The disclosed method includes providing a polishing apparatus adapted to impart relative movement between a polishing pad and a substrate having a first layer to be polished; providing a liquid medium having a pH between 4 and 11 to an interface between the substrate and the polishing pad, the liquid medium including a pH controlling substance including at least one of an acid and a base, a carbonate and a stabilizer additive comprising at least one selected from the group consisting of amino acids and polyacrylic acid; and moving at least one of the substrate and the polishing pad relative to the other to polish the layer of the substrate.
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Espacenet Family List for CN124675, Oct. 2, 2006.
U.S. Appl. No. 60/463,358, entitled “Carbonation of ph controlled KOH solution for improved polishing of oxide films on semiconductor wafers”, no date.
Delehanty Donald J.
Economikos Laertis
Hannah James W.
Heenan Daniel M.
Jamin Fen F.
C. Li Todd M.
George Patricia A.
Neff Daryl
Vinh Lan
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