Planarization process with abrasive polishing slurry that is sel

Abrading – Abrading process – Glass or stone abrading

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451 28, 451 57, B24B 100

Patent

active

060629525

ABSTRACT:
Parameters of an improved planarization process for a semiconductor structure surface are optimized to cause a height reduction rate of the surface that adjusts downward by a factor of at least three once the surface becomes substantially planarized. Localized over-polishing is substantially eliminated by the acquired relative rate of removal for non-planar surfaces over planar surfaces. One embodiment of the improved planarization process comprises the use of a polishing slurry including a plurality of abrasive particles of a size selected that the polishing of a surface having a height causes a surface height reduction rate that drops once the surface becomes planarized. Preferred abrasive particle sizes are about 50 nm in mean diameter or less.

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patent: 5637028 (1997-06-01), Haisma et al.
patent: 5676587 (1997-10-01), Landers et al.
patent: 5709588 (1998-01-01), Muroyama

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