Planarization process utilizing three resist layers

Details Planarization process utilizing three resist layers Planarization process utilizing three resist layers

1990-06-29

1991-12-31

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437228, 437229, 437235, 437231, 148DIG50, 156648, 156653, H01L 2176, H01L 21312

Patent

active

050772341

ABSTRACT:
A planarization method utilizing three resist layers is disclosed. In a substrate where the surface geometry contains trenches or steps of constant height separated by varying distances, after a CVD oxidation layer is formed, a first resist layer (plugs) is formed in wide trenches. A second resist layer is formed on the substrate to provide a gross global planarization of the substrate, which is etched back until all of the resist is removed from the active areas. A third resist layer is then formed on the substrate to provide a near planar surface. All of the resist and CVD oxide is removed from the active areas.

REFERENCES:
patent: 4505025 (1985-03-01), Kurosawa et al.
patent: 4676868 (1987-06-01), Riley et al.
patent: 4783238 (1988-11-01), Roesner
patent: 4836885 (1989-06-01), Breiten et al.
patent: 4876216 (1989-10-01), Tobias et al.

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