Planarization of shallow trench isolation by differential etchba

Details Planarization of shallow trench isolation by differential etchba Planarization of shallow trench isolation by differential etchba

1997-04-07

1999-07-20

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438692, 438734, 438743, 438756, H01L 2176

Patent

active

059267224

ABSTRACT:
A new method for planarization of shallow trench isolation is disclosed by using wet selective etching. The formation of the shallow trench isolation described herein includes a pad layer, a silicon nitride layer formed on a semiconductor substrate. A PE-TEOS oxide layer is subsequently formed on the silicon nitride layer. Then a shallow trench is created by photolithography and dry etching processes to etch the PE-TEOS oxide layer, the silicon nitride layer and the pad layer. Then, the photoresist is removed, an ozone-TEOS layer is form in the shallow trench and on the PE-TEOS oxide layer for the purpose of isolation. A wet selective etching is used to etch the ozone-TEOS layer. A CMP is performed to make the surface of the substrate with a planar surface. Then, a thermal annealing is used for densification of the ozone-TEOS layer and for forming a lining oxide to improve the isolation of the shallow trench isolation.

REFERENCES:
patent: 4853344 (1989-08-01), Darmawan
patent: 5665635 (1997-09-01), Kwon
patent: 5702977 (1997-12-01), Jang et al.
patent: 5726090 (1998-03-01), Jang et al.
patent: 5731241 (1998-03-01), Jang et al.
patent: 5741740 (1998-04-01), Jang et al.
patent: 5786262 (1998-07-01), Jang et al.
patent: 5811345 (1998-09-01), Yu et al.
Huang, J., et al., "Dependence of Film Properties of Subatmospheric Pressure . . . Ratio", J.Electrochem.Soc., vol.140, No.6, pp. 1682-1686, Jun. 1993.
Kwok, K., et al., "Surface Related Phenomena in Integrated PECVD/Ozone-TEOS SACVD . . . Effects", J.Electrochem.Soc., pp. 2172-2177, Aug. 1994.

Affiliated with

Also associated with

Rating

Planarization of shallow trench isolation by differential etchba does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Planarization of shallow trench isolation by differential etchba, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planarization of shallow trench isolation by differential etchba will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1331075