Planarization of metal container structures

Details Planarization of metal container structures Planarization of metal container structures

2006-05-30

2006-05-30

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S757000, C257S748000, C257S764000, C257S769000, C257S774000, C257S602000, C257S532000

Reexamination Certificate

active

07053462

ABSTRACT:
A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material is formed over at least a portion of the conductive material which is inside the opening and which is also over the insulative material outside of the opening. The metal-containing material at least partially fills the opening. At least a portion of both the metal-containing fill material and the conductive material outside of the opening is then removed. Thereafter, at least a portion of the metal-containing fill material which is inside the opening is then removed.

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