Planarization method using a slurry including a dispersant

Details Planarization method using a slurry including a dispersant Planarization method using a slurry including a dispersant

1998-08-21

2000-05-09

Beck, Shrive

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, C09K 1300

Patent

active

06060395&

ABSTRACT:
A planarization method includes providing a wafer surface and positioning a pad for contact with the wafer surface. The wafer surface is then planarized using the pad and a slurry. The slurry includes a dispersant which is one of any micellar forming surfactants. Preferably, the dispersant is a diprotic acid having 6 or less carbons connecting the acid groups, more preferably a diphosphonic acid with 4 or less carbon atoms connecting the acid groups, and most preferably is 1,2-ethylenediphosphonic acid (EDP). The wafer surface may be either a nonplanar or a substantially planar wafer surface. Another slurry that can be used in the method includes a slurry component including an abrasive component and a chemically interactive component that interacts with the surface. The slurry component when used alone in a planarization of the surface results in a surface thickness uniformity having a first standard deviation and a first rate of removal of material from the surface. The slurry further includes a dispersant component of a quantity sufficient to reduce the first standard deviation to a second standard deviation lower than the first standard deviation when the planarization of the surface is performed with the slurry including the slurry component and the dispersant component. The planarization of the surface performed with the slurry including the slurry component and the dispersant component has a second rate of removal substantially equivalent to the first rate of removal.

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