Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2007-09-04
2007-09-04
Kim, Paul D. (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603120, C029S603180, C360S235700, C451S005000, C451S041000
Reexamination Certificate
active
11168215
ABSTRACT:
A method is provided for planarization of structures which minimizes step heights, reduces process steps, improves cleanliness, and provides increased ease of debond. Structures are placed with working surfaces facing down onto an adhesive layer such that structures remain fixed during heating. A bi-layer encapsulating film is used to achieve planarization. A carrier is bi-laminated with a thermoplastic film layer followed by a chemically inert protective polymer film layer that can withstand etch and cleaning processes. The thermoplastic layer is laminated on top of the carrier; the polymer layer is laminated on top of the joined thermoplastic layer and carrier. The carrier with bi-layer film is then placed onto the backside of the structures to resist chemical attack from the front side during photostrip and enable planarization. When heat is applied, the bi-layer encapsulating film melts and pushes the polymer layer into the gaps between structures thereby achieving complete planarization.
REFERENCES:
patent: 5095613 (1992-03-01), Hussinger et al.
patent: 5365700 (1994-11-01), Sawada et al.
patent: 5468177 (1995-11-01), Kindler et al.
patent: 5516430 (1996-05-01), Hussinger
patent: 5911850 (1999-06-01), Zung
patent: 5932113 (1999-08-01), Kurdi et al.
patent: 6045431 (2000-04-01), Cheprasov et al.
patent: 6093083 (2000-07-01), Lackey
patent: 6129855 (2000-10-01), Sawada et al.
patent: 6720561 (2004-04-01), Baumgartner et al.
patent: 358166345 (1983-10-01), None
patent: 6067310 (1994-03-01), None
Dai Qing
Lu Jennifer Qing
McKean Dennis Richard
Row Eun
Zheng Li
Aiello Jeffrey P.
Gill William D.
Kim Paul D.
LandOfFree
Planarization method for a structure having a first surface... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Planarization method for a structure having a first surface..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planarization method for a structure having a first surface... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3785175