1986-09-15
1988-10-04
Sikes, William L.
350 9612, 350 9613, 350370, 350374, G02B 610, G02B 530
Patent
active
047752084
ABSTRACT:
A planar waveguide device including metallic electrodes has a buffer layer of reduced ordinary index of refraction formed in a substrate between its waveguide and electrodes. The device is preferably formed by first fabricating the waveguide in an x-or y-cut substrate of crystalline material, subsequently overcoating the substrate, including the waveguide, with a layer of magnesium, oxidizing the magnesium at temperature to form the buffer layer and then laying the electrodes over the buffer layer. Alternatively, the buffer layer may be formed by a proton exchange process.
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Jackel et al., "Proton Exchange for High-Index Waveguides in LiNbO.sub.3 ", Appl. Phys. Lett., vol. 41, No. 7, 10/82, pp. 607-608.
Robinson William C.
Sanford Norman A.
Caufield Francis J.
Healy Brian M.
Polaroid Corporation
Sikes William L.
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