Planar voltage contrast test structure and method

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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Details

C438S017000, C438S019000, C257S048000

Reexamination Certificate

active

10703285

ABSTRACT:
An integrated circuit and e-beam testing method are disclosed. The integrated circuit includes a test structure with a ground grid, a metal pad having a space therein and positioned within the ground grid, and a metal line connected to the ground grid and positioned in the space. Structures for detecting open circuits and short circuits are described.

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