Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure
Patent
1992-02-26
1994-01-11
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
In integrated structure
257 15, 257199, 257480, 257482, 257486, 257506, 257514, 257601, H01L 2990
Patent
active
052784444
ABSTRACT:
A planar frequency tripler comprised of two semiconductor diode structures connected back-to-back by an n.sup.+ doped layer (N.sup.+) of semiconductor material utilizes an n doped semiconductor material for a drift region (N) over the back contact layer in order to overcome a space charge limitation in the drift region. A barrier layer (B) is grown over the drift region, after a sheet of n-type doping (N.sub.sheet) which forms a positive charge over the drift region, N, to internally bias the diode structure. Two metal contacts are deposited over the barrier layer, B, with a gap between them. To increase the power output of the diodes of a given size, stacked diodes may be provided by alternating barrier layers and drift region layers, starting with a barrier layer and providing a positive charge sheet at the interface of a barrier on both sides of each drift region layer with n-type .delta. doping. The stacked diodes may be isolated by etching or ion implantation to the back contact layer N.sup.+ and a separate metal contact deposited on each stacked diode.
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Frerking Margaret A.
Lieneweg Udo
Maserjian Joseph
Jones Thomas H.
Kusmiss John H.
Miller Guy M.
The United States of America as represented by the Administrator
Wojciechowicz Edward
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