Planar-type field-effect transistor having metallized-well elect

Details Planar-type field-effect transistor having metallized-well elect Planar-type field-effect transistor having metallized-well elect

1982-03-08

1984-11-13

James, Andrew J.

357 15, 357 55, H01L 2948, H01L 2980, H01L 2906

Patent

active

044829078

ABSTRACT:
A field-effect transistor having a gate consisting of a metallic plane projecting metallized wells of less than one micron in diameter through the channel layer downwards to the semiconductor substrate. They are formed by ion-beam etching. Metallization is performed by cathodic sputtering of a substance which forms a Schottky contact with the semiconductor. The wells are spaced at intervals of less than one micron so as to form a row and are joined together by means of a gate electrode.

REFERENCES:
patent: 2790037 (1957-04-01), Shockley
patent: 2869054 (1959-01-01), Tucker
patent: 3767984 (1973-10-01), Shinoda et al.
patent: 3836993 (1974-09-01), Joshi
patent: 4297718 (1981-10-01), Nishizawa et al.
patent: 4300151 (1981-11-01), Nishizawa
patent: 4327475 (1982-05-01), Asai et al.
patent: 4338616 (1982-07-01), Bol

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