Planar transmission line attenuator and switch

Wave transmission lines and networks – Plural channel systems – Having branched circuits

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Details

333 81A, 333262, 357 15, H01P 115

Patent

active

043226957

ABSTRACT:
The planar transmission line attenuator and switch is formed on a flat piece of semiconductor material. Transmission line metallic conductors are deposited on a flat surface of the semiconductor material, and at least one of the metallic conductors forms a Schottky barrier contact to this flat semiconductor surface. The gap between the metallic conductors defines a shunt current path through the semiconductor material. The semiconductor material at the surface in contact with the transmission line conductor must be conductive. By applying a bias voltage to the metallic conductor forming the Schottky barrier contact, the conductivity of the shunt path can be controlled by changing the depletion layer width across the Schottky barrier. A plurality of planar transmission line switches can be combined into multi-port networks, examples of which are cross-bar switching devices and .beta. element switching devices.

REFERENCES:
patent: 3432778 (1969-03-01), Ertel
patent: 3475700 (1969-10-01), Ertel
patent: 3684902 (1972-08-01), Giuliano
patent: 3774123 (1973-11-01), Hume
patent: 3833866 (1974-09-01), Boutelant
patent: 3975690 (1976-08-01), Fleming
patent: 4245230 (1981-01-01), Kwok et al.

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