Planar technology for producing light-emitting devices

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor

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438 29, 438 45, 257 13, 257 21, 257615, 257745, 257189, H01L 2100

Patent

active

059982322

ABSTRACT:
The present invention relates to a novel planar technology approach utilizing ion implantation to improve the fabrication procedure for manufacturing nitride light-emitting and laser diodes. The simplified processing significantly reduces the costs of manufacturing these devices and allows flip-chip bonding to be used for efficient heat removal, yielding much brighter LEDs and more powerful lasers.

REFERENCES:
patent: 4594603 (1986-06-01), Holonyak, Jr.
patent: 5321713 (1994-06-01), Khan et al.
patent: 5408120 (1995-04-01), Manabe et al.
patent: 5563422 (1996-10-01), Nakamura et al.
patent: 5578839 (1996-11-01), Nakamura et al.
patent: 5587593 (1996-12-01), Koide et al.
patent: 5648295 (1997-07-01), Otoma et al.
patent: 5893722 (1999-04-01), Hibbs-Brenner et al.

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