Planar structure for high voltage semiconductor devices with gap

Details Planar structure for high voltage semiconductor devices with gap Planar structure for high voltage semiconductor devices with gap

1980-11-17

1983-10-25

Clawson, Jr., Joseph E.

357 53, 357 54, 357 73, H01L 2934

Patent

active

044122420

ABSTRACT:
Two gaps are placed in the reflowed phosphorus-doped silicon dioxide material overcoating of a planar high voltage semiconductor device to prevent polarization of the reflowed silox. The invention is applicable to any device using a polarizable glassy coating which will be exposed to a high electric field extending along its surface and is shown applied to a high voltage diode, a high voltage MOSFET and a high voltage TRIMOS-type device which is a semiconductor switching device using spaced MOS transistors having a common drain region.

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