1978-12-05
1980-11-25
Edlow, Martin H.
357 30, 357 3, 357 22, 357 61, H01L 29161
Patent
active
042361656
ABSTRACT:
Planar semiconductor device including a crystalline layer of Ga.sub.x Al.sub.1-x Sb compound semiconductor (0.1<x<0.3) grown on a GaSB substrate and a narrow energy band gap semiconductor grown as an active layer on the crystalline layer and having electrodes formed on the active layer in the planar form.
REFERENCES:
patent: 4015284 (1977-03-01), Hara
Kataoka Shoei
Kawashima Mitsuo
Ohta Kimihiro
Agency of Industrial Science & Technology, Ministry of Internati
Edlow Martin H.
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