Planar semiconductor device

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357 30, 357 3, 357 22, 357 61, H01L 29161

Patent

active

042361656

ABSTRACT:
Planar semiconductor device including a crystalline layer of Ga.sub.x Al.sub.1-x Sb compound semiconductor (0.1<x<0.3) grown on a GaSB substrate and a narrow energy band gap semiconductor grown as an active layer on the crystalline layer and having electrodes formed on the active layer in the planar form.

REFERENCES:
patent: 4015284 (1977-03-01), Hara

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