Planar semiconductor and Zener diode device with channel stopper

Details Planar semiconductor and Zener diode device with channel stopper Planar semiconductor and Zener diode device with channel stopper

1993-08-02

1995-04-25

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257566, H01L 2940, H01L 3300

Patent

active

054101778

ABSTRACT:
A planar semiconductor device having a heavily doped channel stopper region of the first conductivity type and at least the following components: a Zener diode having the following regions, seen from an upper surface of the device, an upper diode region of the second conductivity type, a lightly doped first upper component region, of the first conductivity type, in which the upper diode region and the channel stopper region are formed at the upper surface, and a heavily doped lower component region of the first conductivity type; and a component having a second upper component region formed with the upper diode region in the first upper component region at the upper surface and having the same conductivity type as the upper diode region, the first upper component region, the lower component region, and a third upper component region of the first conductivity type and formed in the second upper component region at the upper surface of the device. The channel stopper region is formed adjacent to the upper diode region. A semiconductor region extending between the upper diode region and the channel stopper region has at least one of a length and a specific resistance which is dimensioned, relative to a length and a specific resistance of a semiconductor region between the upper diode region and the lower component region, such that a charge carrier breakdown of the Zener diode takes place between the upper diode region and the channel stopper region.

REFERENCES:
patent: 4618875 (1986-10-01), Flohrs
patent: 5172209 (1992-12-01), Chang

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