Planar reactive evaporation method for the deposition of compoun

Details Planar reactive evaporation method for the deposition of compoun Planar reactive evaporation method for the deposition of compoun

1975-11-14

1977-12-20

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

118 49, 156611, 156612, 219275, 427 87, 427248R, 427248A, H01L 21205, H01L 2118

Patent

active

040639746

ABSTRACT:
An apparatus and method for epitaxial film formation is disclosed. Planar reactive evaporation techniques suitable for scaling are employed to produce high purity compound semiconducting films at relatively low temperatures.

REFERENCES:
patent: 3218205 (1965-11-01), Ruehrwein
patent: 3271561 (1966-09-01), Fiedler et al.
patent: 3419487 (1968-12-01), Robbins et al.
patent: 3540926 (1970-11-01), Rairden
patent: 3615931 (1971-10-01), Arthur
patent: 3661117 (1972-05-01), Cornelius et al.
patent: 3666553 (1972-05-01), Arthur et al.
patent: 3716405 (1973-02-01), Lim
patent: 3915765 (1975-10-01), Cho et al.
patent: 3928092 (1975-12-01), Ballamy et al.
Morris et al., "A New GaAs, GaP . . . Vacuum Deposition . . ." J. Vac. Sci. Technol., vol. 11, No. 2, Mar./Apr. 1974, pp. 506-510.
Tietjen et al., "Preparation . . . InAs.sub.1-x P.sub.x . . . Phosphine," J. Electrochem. Soc., Apr. 1969, vol. 116, No. 4, pp. 492-494.

Affiliated with

Also associated with

Rating

Planar reactive evaporation method for the deposition of compoun does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Planar reactive evaporation method for the deposition of compoun, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planar reactive evaporation method for the deposition of compoun will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-597654