Planar reactive evaporation apparatus for the deposition of comp

Details Planar reactive evaporation apparatus for the deposition of comp Planar reactive evaporation apparatus for the deposition of comp

1977-09-12

1979-03-27

Mayewsky, Volodymyr Y.

Electric heating

Heating devices

Resistive element: igniter type

156611, 118 49, 148175, 219421, 219521, 266149, 427 87, F22B 128

Patent

active

041467744

ABSTRACT:
An apparatus and method for epitaxial film formation is disclosed. Planar reactive evaporation techniques suitable for scaling are employed to produce high purity compound semiconducting films at relatively low temperatures.

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Morris et al., "A New GaAs, GP . . . Vacuum Deposition . . . ", J. Vac. Sci. Technol, vol. 11, No. 2, Mar./Apr. 1974, pp. 506-510.
Maruska et al., "The Preparation . . . InAs.sub.1-x P.sub.x . . . Phosphine," J. Electrochem. Soc., Apr. 1969, vol. 116, No. 4x, pp. 492-494.

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