Planar PV HgCdTe DLHJ fabricated by selective cap layer growth

Details Planar PV HgCdTe DLHJ fabricated by selective cap layer growth Planar PV HgCdTe DLHJ fabricated by selective cap layer growth

1992-07-24

1994-01-18

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 78, 437126, 437133, 437904, 257 21, 257188, 257200, 257442, H01L 3118

Patent

active

052799743

ABSTRACT:
A photodiode (10) fabricated in accordance with the method of the invention includes a substrate (11) and a semiconductor base region (12) overlying the substrate. The base region is comprised of Group IIB-VIA material and has a first type of electrical conductivity. A passivation layer (16) overlies the base region and is also comprised of Group IIB-VIA material. A dielectric layer (18) at least partially overlies the passivation layer. During fabrication the dielectric layer functions as an etch stop during a removal of excess cap material, the remaining cap material forming a cap region (14) within an opening that is etched through the dielectric layer and the passivation layer. The cap region is also comprised of Group IIB-VIA material, has a second type of electrical conductivity, and forms a heterojunction (14a) with the base region. An electrically conductive contact pad (20) and an electrically conductive interconnect, preferably an indium bump (22), are formed upon the cap region. The topside surface of the photodiode is substantially planar, and the indium bump may be made significantly larger than the area of an underlying photodetector unit cell.

REFERENCES:
patent: 3378915 (1966-03-01), Zenner
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patent: 4206003 (1990-06-01), Koehler
patent: 4301463 (1989-09-01), Burrus, Jr.
patent: 4608586 (1986-08-01), Kim
patent: 4868622 (1989-09-01), Shigenaka
"Development of HgCdTe LWIR Heterojunction Mosaics", Proc. IRIS Detector, 1986, vol. II, pp. 251-260, by C. C. Wang et al.

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