Planar programmable metallization memory cells

Details Planar programmable metallization memory cells Planar programmable metallization memory cells

2008-09-19

2010-12-07

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

Reexamination Certificate

active

07847278

ABSTRACT:
Programmable metallization memory cells that have an inert electrode and an active electrode positioned in a non-overlapping manner in relation to a substrate. A fast ion conductor material is in electrical contact with and extends from the inert electrode to the active electrode, the fast ion conductor including superionic clusters extending from the inert electrode to the active electrode. A metal layer extends from the inert electrode to the active electrode, yet is electrically insulated from each of the inert electrode and the active electrode by the fast ion conductor material. Methods for forming programmable metallization cells are also disclosed.

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Kozicki et al., Nanoscale Memory Elements Based on Solid-State Electrolytes, IEEE Transactions on Nanotechnology, vol. 4, No. 3, May 2005.

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