Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-12-20
2005-12-20
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S296000
Reexamination Certificate
active
06977389
ABSTRACT:
The present invention provides a planar polymer memory device that can operate as a non-volatile memory device. A planar polymer memory device can be formed with two or more electrodes and an electrode extension associated with one electrode, wherein a selectively conductive medium and dielectric separate the electrodes. The method for forming a planar polymer memory device comprises at least one of forming a first electrode with an associated plug, forming a second electrode, forming a passive layer over the extension, depositing an organic polymer and patterning the organic polymer. The method affords integration of a planar polymer memory device into a semiconductor fabrication process. A thin film diode (TFD) can further be employed with a planar polymer memory device to facilitate programming. The TFD can be formed between the first electrode and the selectively conductive medium or the second electrode and the selectively conductive medium.
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Buynoski Matthew S.
Okoroanyanwu Uzodinma
Pangrle Suzette K.
Tripsas Nicholas H.
Advanced Micro Devices , Inc.
Amin & Turocy LLP
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