Planar photodetection device suitable for flip-chip process and

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

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257443, 257458, 257459, 257737, 257745, H01L 310328

Patent

active

056683863

ABSTRACT:
A semiconductor photodetection device includes a semiconductor layer of a first conductivity type in which a pair of conductive regions of a second conductivity type are formed, the first conductive region acting as a photodiode and having an area substantially smaller than the area of the second conductive region, wherein the second conductive region carries a second metal bump of which area is at least ten times as large as a first metal bump that is provided on the first conductive region.

REFERENCES:
patent: 5107318 (1992-04-01), Makiuchi et al.
patent: 5376584 (1994-12-01), Agarwala
"Easily Manufactured High-Speed Back-Illuminated GaInAs/InP p-i-n Photodiode", Makiuchi et al, IEEE Photonics Technology Letters, vol. 3, No. 6, Jun. 1991, pp. 530-531.
"Back-Illuminated InGaAs/InP-pin Photodiode Array", Norimatsu et al, Abstract C-123 of the Fall Meeting of IEICE 1992, 1992.
"Back-Illuminated InGaAs/InP-pin Photodiode Array", Yamamoto et al, Abstract C-298 of the Spring Meeting of IEICE 1994, 1994.

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