Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-07-12
2011-07-12
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S621000, C257S197000, C257S184000, C257SE23012, C257SE23011, C438S172000, C438S675000, C438S667000, C438S118000
Reexamination Certificate
active
07977799
ABSTRACT:
A semiconductor device includes a substrate having a first side and a second side and an epitaxial layer disposed over the second side. The device also includes a conductive via extending through the epitaxial layer to the second side and comprising a conductive contact; and a bond pad disposed over the epitaxial layer and comprising a conductive material, wherein the semiconductor is not provided in a package.
REFERENCES:
patent: 5684308 (1997-11-01), Lovejoy et al.
patent: 2006/0128092 (2006-06-01), Rouse
patent: 2008/0164573 (2008-07-01), Basker et al.
patent: 2009/0302429 (2009-12-01), Plossl et al.
Lypen William J.
Snyder Rick D.
Avago Technologies Wireless IP (Singapore) Pte. Ltd.
Baptiste Wilner Jean
Smith Matthew
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