Planar monolithic self-oscillating mixer

Telecommunications – Receiver or analog modulated signal frequency converter – Frequency modifying or conversion

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H04B 126

Patent

active

H00008320

ABSTRACT:
A planar monolithic self-oscillating mixer for millimeter wave applications s formed on a gallium arsenide substrate. A via hole extends from the bottom surface to the top surface of the substrate. Metal is plated on the bottom surface of the substrate and in the via hole forming a heat sink. Above the heat sink are disposed three gallium arsenide layers--an N layer between two N.sup.+ layers. The top layer has a metal connection formed thereon. The gallium aresenide layers are epitaxially deposited using vapor phase techniques. Unwanted portions of these layers are mesa etched away. A radio frequency microstrip transmission line is disposed on the upper surface of the substrate. This transmission line is gap coupled to the Gunn diode and extends to one edge of the substrate. An intermediate frequency microstrip transmission line is connected to the metal connection on the top N.sup.+ layer. This line has a portion disposed on the upper surface of the substrate and extends to the opposite edge of the substrate. Included in the intermediate frequency transmission line is a low pass filter and a beam lead capacitor. A bias line disposed on the substrate extends from one side and is connected to the intermediate frequency transmission line between the beam lead capacitor and the low pass filter.

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