Planar microwave integrated circuit power combiner

Details Planar microwave integrated circuit power combiner Planar microwave integrated circuit power combiner

1980-05-12

1981-09-22

Gensler, Paul L.

Amplifiers

With semiconductor amplifying device

Including distributed parameter-type coupling

333 26, 333128, 333246, 333251, H03F 360, H03F 368, H01P 116, H01P 1162

Patent

active

042912784

ABSTRACT:
A broadband, low loss, microwave integrated circuit power combiner for field effect transistors and other solid state amplifiers has a single metallized MIC substrate contained within a waveguide structure. An array of fin-line transitions from plural microstrip lines to a standard output waveguide can be tapered and placed directly in the waveguide taper region. Undesired higher order modes are absorbed by resistance metallization strips at the tips of the fin-lines or by resistor networks which bridge the microstrip lines.

REFERENCES:
patent: 3390333 (1968-06-01), Klawsnik et al.
patent: 3593174 (1971-07-01), White
patent: 4052683 (1977-10-01), van Heuven et al.
patent: 4157516 (1979-06-01), van de Grijp
van Heuven, A New Integrated Waveguide-Microstrip Transition, IEEE Trans. on MTT, Mar. 1976, pp. 144-147.

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