Planar light-emitting diode

Details Planar light-emitting diode Planar light-emitting diode

1986-09-11

1987-09-15

James, Andrew J.

357 60, H01L 3300

Patent

active

046943110

ABSTRACT:
A light-emitting diode, and corresponding method for its fabrication, in which a blocking layer is used for current confinement, and a rectangular light emission pattern is employed, to avoid an isotropic effects when material systems such as indium phosphide are used. A critical step in the method of the invention is etching an opening through the blocking layer. The opening has its sides precisely oriented at forty-five degrees with respect to the cleavage planes of the substrate, to avoid exposing any crystal planes that are anisotropic.

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patent: 4595454 (1986-06-01), Dautremont-Smith
Hawrylo "LPE Growth of Lasers on (110) InP Substrates", Electron Letters, vol. 17 #8, pp. 282-283, Apr. 16, 1981.
Nishitani "InGaAsP LPE Growth on InP and its Application to DH Lasers", Fujitsu Sci. Tech. Journal, vol. 18 #3, pp. 419-426, Sep. '82.

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