Planar layer of image sensor, method for manufacturing...

Details Planar layer of image sensor, method for manufacturing... Planar layer of image sensor, method for manufacturing...

2007-08-30

2010-11-09

Gurley, Lynne A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257SE31121

Reexamination Certificate

active

07829968

ABSTRACT:
An image sensor formed using a method for manufacturing a planar layer in a process for forming microlenses may be used in a complementary metal oxide semiconductor (CMOS) image sensor. Embodiments provide a planar layer that can improve the operation performance of an image sensor, a manufacturing method thereof, and the image sensor including the planar layer. Embodiments relate to a planar layer located under microlenses, the planar layer including valleys of patterns having a predetermined size, which may eliminate optical cross talk between adjacent pixels.

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patent: 2002/0058350 (2002-05-01), Kim
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patent: 2006/0145218 (2006-07-01), Hwang
patent: 2009/0152660 (2009-06-01), Park
patent: 2006-053458 (1994-02-01), None
patent: 1020000044589 (2000-07-01), None

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