Planar heterojunction bipolar device and method

Details Planar heterojunction bipolar device and method Planar heterojunction bipolar device and method

1985-06-28

1987-06-09

Wojciechowicz, Edward J.

357 16, 357 49, 357 61, H01L 2972

Patent

active

046724141

ABSTRACT:
Vertical AlGaAs heterojunction bipolar transistors (30) with planar structure together with fabrication methods therefor are disclosed. For an emitter (44) on top structure, the contacts (46) to the base (38) are formed by a diffusion of zinc dopants from the surface, and contacts (42) to the collector (34, 36) are formed by diffusions of sulfur dopants from the surface rather than by etch of connecting vias. Further, device isolation is also provided by zinc diffusions (54) rather than by mesa formation. These diffusions are by rapid thermal pulses.

REFERENCES:
patent: 4445130 (1984-04-01), Poulain et al.
patent: 4482910 (1984-11-01), Nishizawa et al.
patent: 4529996 (1985-07-01), Pande
patent: 4559547 (1985-12-01), Shiraki et al.

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