Planar gallium arsenide NPNP microwave switch

Details Planar gallium arsenide NPNP microwave switch Planar gallium arsenide NPNP microwave switch

1990-07-27

1992-02-04

Hille, Rolf

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

357 22, 357 16, 357 17, 357 52, 136255, H01L 2900, H01L 29161, H01L 3300, H01L 3100

Patent

active

050863290

ABSTRACT:
A microwave switch is provided for controlling the transmission of microw energy in a microstrip transmission line structure. The microwave switch comprises an electrically conducting ground plane in contact with one side of an undoped semiconductor material having on its other side a superlattice of gallium arsenide consisting of a periodic sequence of p- and n-doped gallium arsenide layers. P- and n-type regions are formed integral with and electrically connected to the superlattice, and first and second microstrip transmission lines are electrically connected to respective ones of the n- and p-type regions.

REFERENCES:
patent: 3371213 (1968-02-01), Adams et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4411728 (1983-10-01), Sakamoto
patent: 4492810 (1985-01-01), Ovshinsky et al.
patent: 4675711 (1987-04-01), Harder et al.
patent: 4690714 (1987-09-01), Li
patent: 4695857 (1987-09-01), Baba et al.
patent: 4697197 (1987-09-01), Dresner
patent: 4883770 (1989-11-01), Dohler et al.
patent: 4947142 (1990-08-01), Tayrani

Affiliated with

Also associated with

Rating

Planar gallium arsenide NPNP microwave switch does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Planar gallium arsenide NPNP microwave switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planar gallium arsenide NPNP microwave switch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-349928