Planar flux concentrator for MRAM devices

Semiconductor device manufacturing: process – Having magnetic or ferroelectric component

Reexamination Certificate

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Details

C438S264000, C438S239000

Reexamination Certificate

active

07456029

ABSTRACT:
The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.

REFERENCES:
patent: 6559511 (2003-05-01), Rizzo
patent: 6885074 (2005-04-01), Durlam et al.
patent: 6927075 (2005-08-01), Guo
patent: 6943038 (2005-09-01), Meixner et al.
patent: 7067863 (2006-06-01), Guo
patent: 7109045 (2006-09-01), Yagami et al.
patent: 7133309 (2006-11-01), Gaidis et al.
patent: 7211874 (2007-05-01), Guo et al.
patent: 7330371 (2008-02-01), Gaidis et al.
patent: 2004/0099908 (2004-05-01), Durlam et al.
patent: 2004/0166640 (2004-08-01), Yagami et al.
patent: 2004/0233760 (2004-11-01), Guo et al.
patent: 2005/0026308 (2005-02-01), Ingvarsson et al.
patent: 2005/0045971 (2005-03-01), Guo
patent: 2005/0158992 (2005-07-01), Durlam et al.
patent: 2005/0164413 (2005-07-01), Meixner et al.
patent: 2005/0208681 (2005-09-01), Meixner et al.
patent: 2005/0219895 (2005-10-01), Guo et al.
patent: 2005/0274997 (2005-12-01), Gaidis et al.
patent: 2006/0083053 (2006-04-01), Hosotani
patent: 2006/0152969 (2006-07-01), Trouilloud
patent: 2006/0154381 (2006-07-01), Gaidis et al.
patent: 2007/0013016 (2007-01-01), Gaidis et al.
patent: 2007/0096229 (2007-05-01), Yoshikawa et al.
patent: 2007/0279978 (2007-12-01), Ho et al.
patent: 2008/0001207 (2008-01-01), Guo et al.

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