Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-06-28
2008-11-25
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S264000, C438S239000
Reexamination Certificate
active
07456029
ABSTRACT:
The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of soft ferromagnetic material, magnetically stabilized by means of an antiferromagnetic layer. This structure, in addition to being very easy to fabricate, facilitates close control over its magnetic properties, including uniformity and domain structure.
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Guo Yimin
Wang Po-Kang
Ackerman Stephen B.
MagIC Technologies, Inc.
Menz Laura M
Saile Ackerman LLC
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