Planar field oxide isolation process for semiconductor integrate

Details Planar field oxide isolation process for semiconductor integrate Planar field oxide isolation process for semiconductor integrate

1997-02-26

1998-12-15

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438433, 438787, 438782, H01L 276

Patent

active

058496254

ABSTRACT:
A process for fabricating an improved planar field oxide (FOX) structure on a silicon substrate was achieved. The process involves forming recessed areas in the silicon substrate where the field oxide is require. A thin silicon oxide is formed on the surface of the recessed areas as a nucleation layer and then a thicker silicon oxide layer is selectively deposited in the recess areas by Liquid Phase Deposition (LPD). The planar FOX structure formed by LPD can be used in conjunction with a FOX structure formed by the conventional LOCal Oxidation of Silicon (LOCOS) process on the same substrate. The planar field oxide formed by LPD eliminates the bird beak structure and the lateral diffusion of the channel stop implant commonly associated with the LOCOS structure.

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"A Selective SiO.sub.2 Film-Formation Technology using Liquid Phase Deposition for Fully Planarized Multilevel InterConnections", by T. Homma et al, J. Electrochen Soc. Vol 140, No. 8. Aug. 1993.

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