Planar field oxide for semiconductor devices

Details Planar field oxide for semiconductor devices Planar field oxide for semiconductor devices

1982-08-27

1984-04-24

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29571, 29576W, 29578, H01L 21308

Patent

active

044446055

ABSTRACT:
An MOS-type VLSI device is made by a process which provides a planar surface yet maintains geometric control for narrow line widths. The field oxide is recessed by etching the surface of a semiconductor body using thick masking for active device areas. Deposition of field oxide with poor step coverage allows the sidewall to be removed, leaving the top of the field oxide at the same level as the original silicon surface. The thick mask areas are lifted off, resulting in a planar oxide-insulated pattern for formation of transistors or N+ conductive lines.

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