Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-10-31
1994-02-22
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257257, 257280, 257523, H01L 2714
Patent
active
052890155
ABSTRACT:
FETs and quantum well diodes are combined on the same semi-insulating substrate, while providing the FETs with protection from spurious voltages. A deeply buried P region in the semi-insulating substrate is partitioned by a high resistivity proton implanted region, to provide both the P region of the quantum well diode and an isolating buried P layer for the FETs.
REFERENCES:
patent: 4884119 (1989-11-01), Miller
Miller, "Quantum Well Optoelectronic Switching Devices", International Journal of High Speed Electronics, vol. 1, No. 1, pp. 19-46 (1990).
Anholt et al., "Ion implantation into gallium arsenide", Journal of Appl. Phys., vol. 64, pp. 3429-3438 (1988).
Pearton, "Ion Implantation for Isolation of III-V Semiconductors", Materials Science Reports, vol. 4, pp. 315-367 (1990).
Chirovsky, et al. "Large Arrays of Symmetric Self-Electro-Optic Effect Devices", OSA Proceedings on Photonic Switching, H. S. Hinton and J. W. Goodman, eds. (Optical Society of America, Washington, D.C. 1991) 8, 56.
McCormick, et al. "S-SEED-Based Photonic Switching Network Demonstration", OSA Proceedings on Photonic Switching, H. S. Hinton and J. W. Goodman, eds. (Optical Society of America, Washington, D.C. 1991) 8, 48.
D'Asaro, et al. "Buried Interconnect Structure for Symmetric SEEDs" in Advanced Processing and Characterization Technologies, P. H. Halloway, ed. (American Vac. Soc. Series 10, Conf. Proceedings No. 227, American Institute of Physics, N.Y. 1991) 192).
Miller et al. "Field-Effect Transistor Self-Electrooptic Effect Device: Integrated Photodiode, Quantum Well Modulator and Transistor" IEEE Photonics Technology Letters, vol. 1, No. 3 pp. 62-64 (1989).
Chirovsky Leo M. F.
D'Asaro Lucian A.
Pei Shin-Shem
Woodward Ted K.
AT&T Bell Laboratories
Books Glen E.
Larkins William D.
LandOfFree
Planar fet-seed integrated circuits does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Planar fet-seed integrated circuits, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Planar fet-seed integrated circuits will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-173730