Planar epitaxial refill using liquid phase epitaxy

Details Planar epitaxial refill using liquid phase epitaxy Planar epitaxial refill using liquid phase epitaxy

1979-08-17

1981-02-17

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 427 86, H01L 21208

Patent

active

042512999

ABSTRACT:
Planar silicon device structures are fabricated by refilling grooves etched in an oxide-coated silicon substrate using liquid phase epitaxial growth from a tin melt. Since tin does not wet silicon dioxide, silicon nucleation on the oxide-covered areas of the substrate is precluded. Consequently, epitaxial growth selectively occurs in the grooves, without undesirable silicon growth over the oxide. This avoids the short-circuits and surface nonplanarity resulting from the growth of polycrystalline silicon on the oxide layer covering the unetched areas when vapor phase epitaxial growth is employed.

REFERENCES:
patent: 3647578 (1972-03-01), Barnett et al.
patent: 3697336 (1972-10-01), Lamorte
patent: 3936328 (1976-02-01), Nakata
patent: 4070205 (1978-01-01), Rahilly
patent: 4128440 (1978-12-01), Baliga
patent: 4142924 (1979-03-01), Hsieh
Smeltzer, J. Electrochem. Soc., vol. 122, Dec. 1975, pp. 1666-1671.
Baliga, J. Electrochem. Soc., vol. 124, Oct. 1977, pp. 1627-1631.

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