Planar-doped valley field effect transistor (PDVFET)

Details Planar-doped valley field effect transistor (PDVFET) Planar-doped valley field effect transistor (PDVFET)

1991-02-20

1992-09-29

Hille, Rolf

Fishing, trapping, and vermin destroying

357 16, 357 232, 437105, 437126, 437176, H01L 29161, H01L 2920, H01L 21203, H01L 2120

Patent

active

051517582

ABSTRACT:
A planar doped valley field effect transistor (PDVFET), which positions more than one two-dimensional electron gas (2DEG) layer within a homo-structure (GaAs), in order to improve the FET's power output. The FET includes two 2DEG donor planes with an undoped GaAs layer therebetween, and a n-doped GaAs layer on the other side of each donor plane. The FET also includes a 2DEG acceptor plane below the n-doped GaAs layer, which is furthest from the contacts. This 2DEG plane combination forms a deep and wide valley in the FET's conduction band, which improves the FET's power output.

REFERENCES:
patent: 4882609 (1989-11-01), Schubert et al.

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