Planar diffusion source

Details Planar diffusion source Planar diffusion source

1984-08-15

1986-05-13

Hearn, Brian E.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

252950, 252951, 148DIG30, 148186, H01L 21223

Patent

active

045884552

ABSTRACT:
Planar diffusion sources are provided wherein the source is a wafer of inert material, preferably silicon or silicon dioxide and wherein the wafer acts as a substrate for a surface coating comprising a salt, preferably the oxide, of the dopant element. An inert oxide such as aluminum oxide or silicon dioxide may also be included in the coating. When applied to the substrate as a paste or slurry and fired to suitable temperatures, the dopant oxide coating tightly adheres to the substrate wafer. The coated diffusion source is placed alongside semi-conductor wafers in a diffusion furnace; where, at diffusion temperatures, the dopant element volatilizes and diffuses into the surface of the semi-conductor material. The diffusion source can be reused numerous times.

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