Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1975-10-23
1977-08-23
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29577, 29578, 148 15, 148175, 357 35, 357 36, 357 44, 357 46, 357 48, H01L 2122, H01L 21265, H01L 2972
Patent
active
040438490
ABSTRACT:
This relates to a method of producing a monolithic integrated I.sup.2 L circuit including a bipolar analog circuit part. In order to realize good current gain values in the I.sup.2 L transistors as well as high collector breakdown voltages in the analog circuit part, the base zone of the analog circuit part is prediffused prior to diffusion of the I.sup.2 L base and injector regions. After such prediffusion, excessive doping material from the diffusion masking layer is removed and simultaneously windows in the diffusion mask over the I.sup.2 L base and injector regions are opened. Next, doping material having a lower concentration than that which was used for the prediffusion of the analog base region is prediffused into the exposed regions of the substrate. This results in an expanded prediffused base region in the analog circuit part.
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DeTroye, N.C. "Integrated Injection Logic-Present and Future" IEEE J. Solid-State Circuits, vol. SC-9, No. 5, Oct. 1974, pp. 206-211.
Hart et al., "Bipolar LSI . . . . . Integrated Injection Logic" Electronics, Oct. 3, 1974, pp. 111-118.
Hart et al., "Integrated Injection Logic" Philips Tech. Rev., 33, No. 3, 1973, pp. 76-85.
Blossfeld Lothar
Kraft Wolfgang
Ingrassia Vincent B.
IT&T Industries, Inc.
O'Halloran John T.
Rutledge L. Dewayne
Saba W. G.
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