Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1999-02-08
2000-06-13
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257431, 257436, 257461, H01L 31075
Patent
active
060752750
ABSTRACT:
A method is shown for producing a PIN photodiode wherein an intrinsic layer of the photodiode can be made arbitrarily thin. A fabrication substrate is lightly doped to have a first conductivity type in order to form the intrinsic layer of the photodiode. A first active region of the photodiode having the first conductivity type is formed on a first surface of the fabrication substrate. An oxide layer is also formed upon the first surface of the fabrication substrate. A handling substrate is bonded to the first surface of the fabrication substrate. A second surface of the fabrication is then lapped to a obtain a preselected thickness of the intrinsic layer. And a second active region of the photodiode having a second conductivity type is formed on the second surface of the fabrication substrate.
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Chaudhuri Olik
Integration Associates Inc.
Wille Douglas A.
LandOfFree
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