Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2008-01-22
2008-01-22
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S119000, C257S551000, C257SE29335, C257SE29337
Reexamination Certificate
active
10398419
ABSTRACT:
The invention concerns an asymmetric diac comprising a highly-doped substrate (21) of a first type of conductivity, a lightly-doped epitaxial layer (22) of the second type of conductivity on the upper surface of the substrate (21), a highly-doped region (24) of the first type of conductivity on the side of the upper surface of the epitaxial layer, a region (23) of the second type of conductivity more doped than the epitaxial layer beneath the region (24) of the first type of conductivity and not overlapping relative thereto, a channel retaining ring (25) of the second type of conductivity more doped than the epitaxial layer, outside the first region, and a wall (26) of the first type of conductivity outside said ring, joining the substrate.
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Jorgenson Lisa K.
Morris James H.
Pizarro Marcos D.
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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