Planar deep oxide isolation process utilizing resin glass and E-

Details Planar deep oxide isolation process utilizing resin glass and E- Planar deep oxide isolation process utilizing resin glass and E-

1979-09-10

1980-09-16

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29576W, 29578, 29580, 10628713, 148175, 156643, 156657, 156662, 357 49, 357 50, 357 54, 427 93, 427 95, 427 431, H01L 2126, H01L 21316, H01L 2176

Patent

active

042227925

ABSTRACT:
A planar deep oxide isolation process for providing deep wide silicon dioxide filled trenches in the planar surface of a silicon semiconductor substrate, said process comprising the steps:

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patent: 3966577 (1976-06-01), Hochberg
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patent: 3998673 (1976-12-01), Chow
patent: 4004044 (1977-01-01), Franco et al.
patent: 4075044 (1978-02-01), Jager et al.
patent: 4104086 (1978-08-01), Bondur et al.
patent: 4139442 (1979-02-01), Bondur et al.
Klerer, J., "Method for Deposition of SiO.sub.2 at Low Temperatures," J. Electrochem. Soc., vol. 108, No. 11, Nov. 1961, pp. 1070-1071.
Berkenblit et al., "Low Temperature Forming of SiO.sub.2 Layers," I.B.M. Tech. Discl. Bull., vol. 13, No. 5, Oct. 1970, p. 1297.
Roberts, E. D., "Preparation and Properties of Polysiloxane Electron Resist," J. Electrochem. Soc., vol. 120, No. 12, Dec. 1973, pp. 1716-1721.

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