Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1994-04-29
1995-08-01
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257446, 257464, 257465, H01L 2714, H01L 3100
Patent
active
054382173
ABSTRACT:
A planar photosensitive device, such as an array of APDs, includes a planar block of n type semiconductor material having a plurality of p type wells in the block surrounded by a foundation of n type semiconductor material. Each p type well corresponds to an APD pixel and is disposed so as to respectively adjoin a first surface of the block and such that a respective p-n junction is formed between the p type material in the well and the n type material foundation. Each APD pixel further comprises depletion layer profile modification means such that the peak surface electric field of the p-n junction in each well is substantially less than the bulk electric field of the same p-n junction. One type of depletion layer profile modification means is a peripheral doped region of p material disposed around each respective well; an alternative depletion layer profile modification means is a respective isolation moat around each well so as to separate p type material in the well from n type material in the foundation except along a parallel plane segment of the p-n junction.
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V. L. Gelezunas et al., "Uniform Large-Area High-Gain Silicon Avalanche Radiation Detectors From Transmutation Doped Silicon," American Institute of Physics, 1977, pp. 118-120.
Sze, S. M., "Physics of Semiconductor Devices," John Wiley, New York, 1981, pp. 783-787.
Castleberry Donald E.
Ishaque Ahmad N.
General Electric Company
Ingraham Donald S.
Mintel William
Snyder Marvin
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