Planar avalanche photodiode

Details Planar avalanche photodiode Planar avalanche photodiode

2004-04-30

2008-03-25

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S186000, C257S191000, C257S438000, C257SE31063, C257SE31064

Reexamination Certificate

active

07348608

ABSTRACT:
A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the two contact areas and a semiconductor absorption layer is positioned between the multiplication layer and the upper contact layer. The photodiode has a low capacitance and a low field near the edges of the semiconductor multiplication and absorption layers.

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