Placement of clock circuits for semiconductor memory

Static information storage and retrieval – Format or disposition of elements

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365 63, G11C 1140

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active

045063478

ABSTRACT:
A dynamic random access memory (10) is fabricated on a substrate (12) and is divided into memory sections (14, 16). Memory cells (46) are connected to bit lines (18-28, a and b), which are organized into pairs that are connected to respective sense amplifiers (34-44). A row clock circuit (52) generates clock signals to enable the addressed word line. Additional clock signals are generated by other clock circuits (56, 58). A charge pump circuit (78, 80) produces a substrate bias and includes a free running oscillator. The signal generation circuits (52, 56, 58, 78, 80) produce signal transitions which are coupled by parasitic capacitors (66-76, 81-88) into the bit lines (18-28, a and b). The clock circuits are fabricated in a symmetrical placement in relation to the bit lines (18-28, a and b) and sense amplifiers (34-44) such that the transient signals capacitively coupled from the clock circuits into the bit lines have a very low differential mode amplitude. The reduced differential mode interference from the clock circuits permits the sense amplifiers (34-44) to more accurately read the states of the memory cells (46).

REFERENCES:
patent: 4072932 (1978-02-01), Kitagawa et al.
patent: 4161791 (1979-07-01), Leach
patent: 4255679 (1981-03-01), White, Jr. et al.

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