Pixel with buried channel spill well and transfer gate

Details Pixel with buried channel spill well and transfer gate Pixel with buried channel spill well and transfer gate

1998-12-28

2000-07-11

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257234, 257236, 257249, H01L 27148, H01L 29768

Patent

active

060876867

ABSTRACT:
a pixel is formed in a substrate having a first conductivity type, the pixel being coupled to a register for output. The pixel includes a pixel channel of a second conductivity type formed in the substrate, a transfer gate electrode, a storage gate electrode and a photodiode. The pixel channel includes a transfer portion at a first end of the pixel channel proximal to the register, a diode portion at a second end distal to the register and a storage portion between the transfer portion and the diode portion. The transfer gate electrode is insulatively spaced over the transfer portion, and the storage gate electrode is insulatively spaced over the storage portion. The diode is formed within the diode portion using the storage gate electrode as a mask.

REFERENCES:
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 4980735 (1990-12-01), Yamawaki
patent: 5003565 (1991-03-01), Yoshida
patent: 5070380 (1991-12-01), Erhardt et al.
patent: 5181093 (1993-01-01), Kawaura
patent: 5191399 (1993-03-01), Maegawa et al.
patent: 5235196 (1993-08-01), Anagnostopoulos et al.
patent: 5514887 (1996-05-01), Hokari
patent: 5625210 (1997-04-01), Lee et al.
patent: 5698874 (1997-12-01), Hayashi
patent: 5699114 (1997-12-01), Park
patent: 5986297 (1999-11-01), Guidash et al.

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