Pixel transistor free of parasitic capacitance fluctuations from

Details Pixel transistor free of parasitic capacitance fluctuations from Pixel transistor free of parasitic capacitance fluctuations from

1987-01-20

1988-08-09

Miller, Stanley D.

357 237, G02F 1133, H10L 2978

Patent

active

047623985

ABSTRACT:
In a liquid crystal display device, display electrodes are arranged in a matrix form, gate and source buses are provided for each row and column of the display electrodes, and a pixel driving composite transistor is connected between each display electrode and the gate and source buses for driving the display electrode. Source-drain electrode pairs opposite in the direction of arrangement, which are equal in number, are provided for each transistor, and a common semiconductor layer and a common gate electrode are provided for all the source and drain electrodes to form an even number of thin film transistors connected in parallel to one another, thereby constituting the composite transistor for driving a pixel.

REFERENCES:
patent: 3225261 (1965-12-01), Wolf
patent: 4597001 (1986-06-01), Bortscheller et al.
"Characteristics of Field-Effect Transistor Using Fluorinated Amorphous-Silicon (a-Si:F)", by Matsumura et al., Electronic Letters, vol. 17, No. 3, 6/25/81, pp. 457-458.

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