Pixel structure of LCD and fabrication method thereof

Details Pixel structure of LCD and fabrication method thereof Pixel structure of LCD and fabrication method thereof

2010-07-27

2011-11-15

Bryant, Kiesha (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S022000, C257S059000, C257S098000, C257SE33068

Reexamination Certificate

active

08058084

ABSTRACT:
In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current.

REFERENCES:
patent: 5605847 (1997-02-01), Zhang
patent: 5648674 (1997-07-01), Weisfield et al.
patent: 5734449 (1998-03-01), Jang
patent: 6812912 (2004-11-01), Miyajima et al.
patent: 7196746 (2007-03-01), Yang
patent: 2005/0161674 (2005-07-01), Fujimoto et al.
patent: 2009/0176326 (2009-07-01), Tseng
patent: 200710471 (2007-03-01), None
English language translation of the abstract and pertinent part of TW 200710471 (published Mar. 16, 2007).

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