Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2007-08-28
2010-11-09
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257SE29112, C438S004000, C349S139000, C349S192000
Reexamination Certificate
active
07829895
ABSTRACT:
The pixel structure and the repairing method of the TFT array substrate are provided. The pixel has a semiconductor electrode which is partially overlapped with a floating metal located in the first conductive layer. Both the data line and the drain electrode have protruded regions partially overlapped with the semiconductor electrode and the floating metal. Once the pixel is found to be a white defect, a laser beam is used to irradiate the protruded region of the data line to electrically connect the data line and the floating metal and so as to form a diode structure having the rectified effect. Consequently, after the laser repair, the pixel defect will display as the non-flicked white point and black point in the white-picture inspection and the black-picture inspection respectively.
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Arena Andrew O
Chunghwa Picture Tubes Ltd.
Gurley Lynne A
Muncy Geissler Olds & Lowe, PLLC
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